Researchers Solve Two Major Problems Holding Back SiC Electronics
Source ↗
👁 0
💬 0
A new bottom gate design takes advantage of the intrinsic properties of SiC. For more than 20 years, silicon carbide – SiC – has been viewed as a promising material for electronics that must function in extreme environments. Yet despite years of research, that promise has rarely translated into practical devices. Researchers at Kyoto University [...]
Comments (0)